STH130N10F3 - STMicroelectronics

STH130N10F3 N-channel Power MOSFET

These devices are N-channel enhancement mode Power MOSFETs produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize onresistance and gate charge to provide superior switching performance. $4!" ' ' 3 4/ 4/ &0AND) 0!+&0 3 (£0!+  !-V Table 1. Device summary Order codes .

Features

Order codes STF130N10F3 STFI130N10F3 STH130N10F3-2 STP130N10F3
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■ VDSS RDS(on) max. 9.6 mΩ ID 3 46 A TO-220FP 1 2 1 2 3 100 V 9.3 mΩ 9.6 mΩ I²PAKFP 120 A TAB TAB Ultra low on-resistance 100% avalanche tested 2 1 3 1 2 3 H²PAK-2 TO-220 Applications
■ High current switching applications Figure 1. Internal schematic diagram $4!" Description These devices are N-channel enhancement mode Power MOSFETs produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize onresistance and gate charge to provide superior switching performance. $.