The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds anh high voltage capability. It uses a Hollow Emitter structure to enhance switching speeds. Figure 1. TO-220 Internal schematic diagram Table 1. Device summary Marking H13009 Package TO-220 Packaging Tube Order code STH13009 October 2007 Rev 1 1.
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High voltage capability Low spread of dynamic parameters Very high switching speed
Applications
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Switching mode power supplies
1
2
3
Description
The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds anh high voltage capability. It uses a Hollow Emitter structure to enhance switching speeds. Figure 1.
TO-220
Internal schematic diagram
Table 1.
Device summary
Marking H13009 Package TO-220 Packaging Tube
Order code STH13009
October 2007
Rev 1
1/9
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This is preliminary information on a new product now in develo.
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---|---|---|---|---|
1 | STH130N10F3 |
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2 | STH130N10F3-2 |
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N-channel Power MOSFET | |
3 | STH130N8F7-2 |
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N-CHANNEL POWER MOSFET | |
4 | STH130N8F7-2 |
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N-Channel MOSFET | |
5 | STH13N120K5-2AG |
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6 | STH13NB60 |
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7 | STH13NB60FI |
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N-CHANNEL MOSFET | |
8 | STH1061 |
SEMTECH ELECTRONICS |
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9 | STH10N80K5-2AG |
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10 | STH10NA50 |
ST Microelectronics |
N-CHANNEL Power MOS MOSFET | |
11 | STH10NA50FI |
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N-CHANNEL Power MOS MOSFET | |
12 | STH10NC60 |
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