STGW80V60DF - STMicroelectronics

STGW80V60DF IGBT

This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parame.

Features

• Maximum junction temperature: TJ = 175 °C
• Tail-less switching off
• VCE(sat) = 1.85 V (typ.) @ IC = 80 A
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
• Very fast soft recovery antiparallel diode Applications
• Photovoltaic inverters
• Uninterruptible power supply
• Welding
• Power factor correction
• Very high frequency converters G (1) E (3) Description This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and sw.