STGW80H65FB - STMicroelectronics

STGW80H65FB IGBT

G (1) E (3) This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the new “HB” series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat) temperature coeff.

Features

TAB 3 2 1 TO-247 TO-247 long leads 3 2 1 TO-3P
• Maximum junction temperature: TJ = 175 °C
• High speed switching series
• Minimized tail current
• VCE(sat) = 1.6 V (typ.) @ IC = 80 A
• Tight parameter distribution
• Safe paralleling
• Low thermal resistance Applications Figure 1. Internal schematic diagram C (2 or TAB)
• Photovoltaic inverters
• High frequency converters Description G (1) E (3) This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the new “HB” series of IGBTs, which represent an optimum compromise b.