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STGW80V60DF |
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| Part Number | STGW80V60DF |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction a... |
| Features |
• Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.85 V (typ.) @ IC = 80 A • Tight parameters distribution • Safe paralleling • Low thermal resistance • Very fast soft recovery antiparallel diode Applications • Photovoltaic inverters • Uninterruptible power supply • Welding • Power factor correction • Very high frequency converters G (1) E (3) Description This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and sw... |
| Document |
 STGW80V60DF Data Sheet
PDF 1.56MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | STGW80H65DFB |
STMicroelectronics |
IGBT |
|
| 2 | STGW80H65DFB-4 |
STMicroelectronics |
IGBT |
|
| 3 | STGW80H65FB |
STMicroelectronics |
IGBT |
|
| 4 | STGW100H65FB2-4 |
STMicroelectronics |
IGBT |
|
| 5 | STGW100N30 |
STMicroelectronics |
Fast IGBT |
|