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Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances. The suffix "S" identifies a family optimized to achieve minimum on-voltage drop for low frequency applications (<1kHz). APPLICATIONS GAS DISCHARGE LAMP s STATIC RELAYS s MO.
T c = 25 C Collector Current (continuous) at T c = 100 C Collector Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Storage Temperature Max. Operating Junction Temperature
o o
Value 600 ± 20 6 3 25 48 0.32 -65 to 175 175
Unit V V A A A W W/ o C
o o
C C
(
•) Pulse width limited by safe operating area
March 2000
1/8
STGD3NB60SD
THERMAL DATA
R thj-case R thj-amb R thc-sink Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Max Max Typ 3.125 100 1.5
o o
C/W C/W o C/W
ELECTRICAL CHARACTERISTICS (Tj = 25 oC unless otherwise spe.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STGD3NB60S |
ST Microelectronics |
N-CHANNEL IGBT |
|
| 2 | STGD3NB60F |
ST Microelectronics |
N-CHANNEL IGBT |
|
| 3 | STGD3NB60H |
ST Microelectronics |
N-CHANNEL IGBT |
|
| 4 | STGD3NB60HD |
STMicroelectronics |
N-CHANNEL 6A - 600V - DPAK PowerMESH IGBT |
|
| 5 | STGD3NB60K |
ST Microelectronics |
N-CHANNEL IGBT |
|
| 6 | STGD3NC120H |
STMicroelectronics |
7A 1200V very fast IGBT |
|
| 7 | STGD3NC60HD |
STMicroelectronics |
N-CHANNEL 3A - 600V DPAK Very Fast PowerMESH IGBT |
|
| 8 | STGD3HF60HD |
ST Microelectronics |
600V Very Fast IGBT |
|
| 9 | STGD3HF60HDT4 |
STMicroelectronics |
IGBT |
|
| 10 | STGD3HF60WD |
ST Microelectronics |
600V ultra fast IGBT |
|
| 11 | STGD10HF60KD |
STMicroelectronics |
short-circuit rugged IGBT |
|
| 12 | STGD10NC60H |
STMicroelectronics |
N-channel IGBT |
|