STGD3NB60HD - STMicroelectronics

STGD3NB60HD N-CHANNEL 6A - 600V - DPAK PowerMESH IGBT

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances. The suffix "H" identifies a family optimized for high frequency applications (up to 50kHz)in order to achieve very high switching performances (reduced tfall) mantaining a .

Features

PE & REEL September 2003 1/10 www.DataSheet4U.com STGD3NB60HD ABSOLUTE MAXIMUM RATINGS Symbol VCES VECR VGE IC IC ICM ( ) PTOT Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Emitter-Collector Voltage Gate-Emitter Voltage Collector Current (continuous) at TC = 25°C Collector Current (continuous) at TC = 100°C Collector Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Storage Temperature Operating Junction Temperature Value 600 20 ± 20 10 6 24 50 0.4
  –55 to 150 Unit V V V A A A W W/°C °C ( ) Pulse width limited by safe operating area THERMAL DATA Rthj-case Rthj-amb Th.