STGD19N40LZ - STMicroelectronics

STGD19N40LZ Automotive-grade 390V internally clamped IGBT

This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gateemitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition systems. E (3) SC30180 Order code STGD19N40LZ Table 1. Devi.

Features

• AEC-Q101 qualified
• 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH
• ESD gate-emitter protection
• Gate-collector high voltage clamping
• Logic level gate drive
• Low saturation voltage
• High pulsed current capability
• Gate and gate-emitter resistor Figure 1. Internal schematic diagram C (2 or TAB) Applications
• Pencil coil electronic ignition driver G (1) RG RGE Description This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gateemitter provide overvoltage protection capabilities. The device also .