This application-specific IGBT utilizes the most advanced PowerMESH technology optimized for coil driving in the harsh environment of automotive ignition systems. These devices show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range. Moreover, ESD-protected logic level gate input and an integrated gate resi.
• AEC-Q101 qualified
• SCIS energy of 320 mJ @ TJ = 25 °C
• Parts are 100% tested in SCIS
• ESD gate-emitter protection
• Gate-collector high voltage clamping
• Logic level gate drive
• Very low saturation voltage
• High pulsed current capability
• Gate and gate-emitter resistor
Applications
• Automotive ignition coil driver circuit
Description
This application-specific IGBT utilizes the most advanced PowerMESH technology optimized for coil driving in the harsh environment of automotive ignition systems. These devices show very low on-state voltage and very high SCIS energy capability over a w.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STGB25N36LZAG |
STMicroelectronics |
Automotive-grade 360V internally clamped IGBT | |
2 | STGB20H60DF |
STMicroelectronics |
600V 20A high speed trench gate field-stop IGBT | |
3 | STGB20N40LZ |
STMicroelectronics |
Automotive-grade 390V internally clamped IGBT | |
4 | STGB20N45LZAG |
STMicroelectronics |
Automotive-grade 450V internally clamped IGBT | |
5 | STGB20NB32LZ |
ST Microelectronics |
IGBT | |
6 | STGB20NB32LZ-1 |
STMicroelectronics |
IGBT | |
7 | STGB20NB37LZ |
ST Microelectronics |
N-CHANNEL IGBT | |
8 | STGB20NC60V |
STMicroelectronics |
very fast IGBT | |
9 | STGB20NC60VT4 |
STMicroelectronics |
very fast IGBT | |
10 | STGB20V60DF |
STMicroelectronics |
600V 20A very high speed trench gate field-stop IGBT | |
11 | STGB10H60DF |
STMicroelectronics |
IGBT | |
12 | STGB10HF60KD |
ST Microelectronics |
Short-circuit Rugged IGBT |