Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
lete uc Using the latest high voltage technology based on a d patented strip layout, STMicroelectronics has so ro designed an advanced family of IGBTs, the b P PowerMESH™ IGBTs, with outstanding performances. The built in collector-gate zener - O te exhibits a very precise active clamping while the ) le gate-emitter zener supplies an ESD protection. 3 1 D2P.
2LZ I2PAK TUBE December 2003 1/11 STGB20NB32LZ - STGB20NB32LZ-1 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VGS = 0) CLAMPED V VECR Reverse Battery Protection 20 V VGE Gate-Emitter Voltage CLAMPED V IC Collector Current (continuous) at Tc = 25°C 40 A IC Collector Current (continuous) at Tc = 100°C 30 A ICM ( ) Collector Current (pulsed) 80 A Eas Single Pulse Energy Tc = 25°C 700 mJ Ptot Total Dissipation at Tc = 25°C Derating Factor t(s) ESD ESD (Human Body Model) Tstg Storage Temperature uc Tj Max. Operatin.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STGB20NB32LZ |
ST Microelectronics |
IGBT |
|
| 2 | STGB20NB37LZ |
ST Microelectronics |
N-CHANNEL IGBT |
|
| 3 | STGB20N40LZ |
STMicroelectronics |
Automotive-grade 390V internally clamped IGBT |
|
| 4 | STGB20N45LZAG |
STMicroelectronics |
Automotive-grade 450V internally clamped IGBT |
|
| 5 | STGB20NC60V |
STMicroelectronics |
very fast IGBT |
|
| 6 | STGB20NC60VT4 |
STMicroelectronics |
very fast IGBT |
|
| 7 | STGB20H60DF |
STMicroelectronics |
600V 20A high speed trench gate field-stop IGBT |
|
| 8 | STGB20V60DF |
STMicroelectronics |
600V 20A very high speed trench gate field-stop IGBT |
|
| 9 | STGB25N36LZAG |
STMicroelectronics |
Automotive-grade 360V internally clamped IGBT |
|
| 10 | STGB25N40LZAG |
STMicroelectronics |
Automotive-grade 400V internally clamped IGBT |
|
| 11 | STGB10H60DF |
STMicroelectronics |
IGBT |
|
| 12 | STGB10HF60KD |
ST Microelectronics |
Short-circuit Rugged IGBT |
|