STGB20NB32LZ - ST Microelectronics

STGB20NB32LZ IGBT

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection. APPLICATIONS s AUTOMOTIVE IGNITION INTER.

Features

ection Gate-Emitter Voltage Collector Current (continuous) at Tc = 25°C Collector Current (continuous) at Tc = 100°C Collector Current (pulsed) Single Pulse Energy Tc = 25°C Total Dissipation at Tc = 25°C Derating Factor ESD (Human Body Model) Storage Temperature Max. Operating Junction Temperature Value CLAMPED 20 CLAMPED 40 30 80 700 150 1 4
  –65 to 175 175 Unit V V V A A A mJ W W/°C KV °C °C (
•)Pulse width limited by safe operating area December 2002 1/11 STGB20NB32LZ - STGB20NB32LZ-1 THERMAL DATA Rthj-case Rthj-amb Rthc-sink Thermal Resistance Junction-case Max Thermal Resistance Junct.