STF33N60M2 - STMicroelectronics

STF33N60M2 N-CHANNEL POWER MOSFET

These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.

Features

123 I2PAK TAB 3 2 1 TO-220FP 3 2 1 TO-220 3 2 1 TO-247 Figure 1. Internal schematic diagram , TAB Order codes STF33N60M2 STI33N60M2 STP33N60M2 STW33N60M2 VDS @ TJmax RDS(on) max ID 26 A(1) 650 V 0.125 Ω 26 A 1. Limited by maximum junction temperature.
• Extremely low gate charge
• Lower RDS(on) x area vs previous generation
• MDmesh™ II technology
• Low gate input resistance
• 100% avalanche tested
• Zener-protected Applications
• Switching applications
• LCC converters, resonant converters AM15572v1 Description These devices are N-channel Power MOSFETs developed using a new gen.