STF30NM50N - STMicroelectronics

STF30NM50N Power MOSFET

PD s b O t e l o Table 1. Order codes STB30NM50N STI30NM50N STF30NM50N STP30NM50N STW30NM50N F w C This series of devices is designed using the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest onresistance and gate charge. It is.

Features

3 1 l TO-247 3 2 Type STB30NM50N STI30NM50N STF30NM50N STP30NM50N STW30NM50N VDSS (@Tjmax) 550 V 550 V 550 V RDS(on) max < 0.115 Ω < 0.115 Ω < 0.115 Ω < 0.115 Ω < 0.115 Ω ID 27 A 27 A 27 A 27 A D²PAK ww re .nu at an e ce. 8 com Tr ia 27 A(1) TO-220 550 V 550 V 1. Limited only by maximum temperature allowed
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■ 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Application
■ Switching applications Description PD s b O t e l o Table 1. Order codes STB30NM50N STI30NM50N STF30NM50N STP30NM50N STW30NM50N F w C This series of devices is design.