STF33N60DM6 - STMicroelectronics

STF33N60DM6 N-channel MOSFET

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fastS(3) AM15572v1_no_tab recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for th.

Features

Order code VDS RDS(on) max. STF33N60DM6 600 V 128 mΩ
• Fast-recovery body diode
• Lower RDS(on) per area vs previous generation
• Low gate charge, input capacitance and resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected ID 25 A Applications G(1)
• Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fastS(3) AM15572v1_no_tab recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) p.