STF12NM50ND - STMicroelectronics

STF12NM50ND N-channel Power MOSFET

FDmesh™ technology combines the MDmesh™ features with an intrinsic fast-recovery body diode. The resulting product has reduced onresistance and fast switching commutations, making it especially suitable for bridge topologies where low trr is required. 3 1 D2PAK 3 1 DPAK 3 2 1 TO-220FP Figure 1. Internal schematic diagram $ ' Table 1. Device summary.

Features

Type VDSS (@Tjmax) RDS(on) max ID STB12NM50ND 550 V 0.38 Ω 11 A STD12NM50ND 550 V 0.38 Ω 11 A STF12NM50ND 550 V 0.38 Ω 11 A
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance Application
■ Switching applications Description FDmesh™ technology combines the MDmesh™ features with an intrinsic fast-recovery body diode. The resulting product has reduced onresistance and fast switching commutations, making it especially suitable for bridge topologies where low trr is required. 3 1 D2PAK 3 1 DPAK 3 2 1 TO-220FP Figure 1. Internal schematic d.