STF12NM50N - STMicroelectronics

STF12NM50N N-channel Power MOSFET

This series of devices is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters Internal schematic diagram Applica.

Features

Type STB12NM50N STD12NM50N STF12NM50N STP12NM50N
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■ VDSS (@Tjmax) 550V 550V 550V 550V RDS(on) <0.38Ω <0.38Ω <0.38Ω <0.38Ω ID 11A 11A 11A (1) 11A 3 1 1 3 2 3 1 DPAK TO-220 100% avalanche tested Low input capacitance and gate charge Low gate input resistancel D²PAK 3 1 2 TO-220FP Description This series of devices is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding.