STF12N50M2 - STMicroelectronics

STF12N50M2 N-CHANNEL POWER MOSFET

This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. A.

Features

3 2 1 TO-220FP Order code STF12N50M2 VDS 500 V RDS(on) max ID 0.38 Ω 10 A
• Extremely low gate charge
• Lower RDS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected Figure 1. Internal schematic diagram Applications
• Switching applications Description This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It .