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This FDmesh II Power MOSFET with fast-recovery body diode is produced using MDmesh II technology. Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters. Product status link STF10NM60ND Product summary Order code STF10NM6.
Order code
VDS at TJ max.
RDS(on) max.
ID
STF10NM60ND
650 V
600 mΩ
8A
• Fast-recovery body diode
• Low gate charge and input capacitance
•
Low on-resistance RDS(on)
• 100% avalanche tested
• High dv/dt ruggedness
Applications
• Switching applications
Description
This FDmesh II Power MOSFET with fast-recovery body diode is produced using MDmesh II technology. Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.
Product status link STF10NM60N.
STF10NM60ND - INCHANGE
isc N-Channel MOSFET Transistor ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 0.6Ω (max) ·Enhancement mode ·Fast Swi.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STF10NM60N |
ST Microelectronics |
N-Channel Power MOSFET |
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| 2 | STF10NM65N |
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| 3 | STF10NM65N |
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