STF10N80K5 - STMicroelectronics

STF10N80K5 N-CHANNEL POWER MOSFET

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in onresistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Order code STF10N80K5 Table 1. Device summary Marking Package 10N8.

Features

Order code VDS STF10N80K5 800 V RDS(on) max 0.600 Ω ID PTOT 9 A 30 W 3 2 1 TO-220FP Figure 1. Internal schematic diagram D(2) G(1) S(3) AM01476v1
• Industry’s best RDS(on)
• Industry’s best figure of merit (FoM)
• Ultra-low gate charge
• 100% avalanche tested
• Zener-protected Applications
• Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in onresistance and ultra-low gate charge for applications requiring superior power density.