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STF10NM60ND |
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| Part Number | STF10NM60ND |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This FDmesh II Power MOSFET with fast-recovery body diode is produced using MDmesh II technology. Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior ... |
| Features |
Order code
VDS at TJ max.
RDS(on) max.
ID
STF10NM60ND
650 V
600 mΩ
8A
• Fast-recovery body diode • Low gate charge and input capacitance • Low on-resistance RDS(on) • 100% avalanche tested • High dv/dt ruggedness Applications • Switching applications Description This FDmesh II Power MOSFET with fast-recovery body diode is produced using MDmesh II technology. Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters. Product status link STF10NM60N... |
| Document |
 STF10NM60ND Data Sheet
PDF 563.00KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | STF10NM60N |
ST Microelectronics |
N-Channel Power MOSFET |
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| 2 | STF10NM60ND |
INCHANGE |
N-Channel MOSFET |
|
| 3 | STF10NM65N |
STMicroelectronics |
N-channel Power MOSFET |
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| 4 | STF10NM65N |
INCHANGE |
N-Channel MOSFET |
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| 5 | STF10N105K5 |
STMicroelectronics |
N-channel Power MOSFET |
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