STD9410 - SamHop Microelectronics

STD9410 N-Channel Enhancement Mode Field Effect Transistor

S T U/D9410 S amHop Microelectronics C orp. P reliminary May.28 2004 N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S www.DataSheet4U.com 30V F E AT UR E S ( m W ) Max ID 24A R DS (ON) S uper high dense cell design for low R DS (ON ). 32 @ V G S = 10V 57 @ V G S = 4.5V R ugged and reliable. TO-252 and TO-251 P ackage. .

Features

AR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current www.DataSheet4U.com S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS c Condition V GS = 0V, ID = 250uA V DS = 24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 7A V GS = 4.5V,ID = 3.5A V DS = 5V, V GS = 10V V DS = 5V, ID = 7A Min Typ C Max Unit 30 1 V uA 100 nA 1 1.7 27 52 45 8 599 110 81 9.7 15.4 17.2 10.8 13 6.8 2.4 3.1 2.5 32 57 V m ohm m ohm Gate-Body Leakage ON CHAR ACTE R IS TICS b Gate Threshold .