STD4NK80Z-1 - STMicroelectronics

STD4NK80Z-1 N-channel Power MOSFET

This high-voltage device is a Zener-protected N-channel Power MOSFET developed S(3) using the SuperMESH technology by STMicroelectronics, an optimization of the well- AM01476v1_tab established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding app.

Features

TAB Order code VDS RDS(on) max. ID STD4NK80Z-1 800 V 3.5 Ω 3A 3 2 1
• 100% avalanche tested
• Gate charge minimized IPAK
• Very low intrinsic capacitance
• Zener-protected D(2, TAB) Applications
• Switching applications G(1) Description This high-voltage device is a Zener-protected N-channel Power MOSFET developed S(3) using the SuperMESH technology by STMicroelectronics, an optimization of the well- AM01476v1_tab established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the mos.