This application specific Power Mosfet is the third generation of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This.
GRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V DS V DGR V GS ID ID I DM (
• ) P tot Ts tg Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature
o o o
Value 30 30 ± 15 40 28 160 55 0.37 -65 to 175 175
Un it V V V A A A W W /o C
o o
C C
(
•) Pulse width limited by safe operating area
May 2000
1/6
STD40NF3LL
THERMAL DATA
R thj -case R thj -amb Tl.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STD40NF02L |
ST Microelectronics |
N-CHANNEL STripFET POWER MOSFET | |
2 | STD40NF03L |
ST Microelectronics |
N-CHANNEL STripFET POWER MOSFET | |
3 | STD40NF06 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
4 | STD40NF06LZ |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
5 | STD40NF10 |
ST Microelectronics |
N-Channel Power MOSFET | |
6 | STD40N01 |
SamHop Microelectronics |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
7 | STD40N10 |
SamHop Microelectronics |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
8 | STD40N2LH5 |
STMicroelectronics |
N-channel Power MOSFET | |
9 | STD40NE03L |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
10 | STD40P3LLH6 |
STMicroelectronics |
P-CHANNEL POWER MOSFET | |
11 | STD40P8F6AG |
STMicroelectronics |
P-CHANNEL POWER MOSFET | |
12 | STD410S |
SamHop Microelectronics |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |