STD40NE03L - STMicroelectronics

STD40NE03L N-CHANNEL POWER MOSFET

This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPE.

Features

gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 oC Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 o C Derating Factor dv/ dt (1 ) Peak Diode Recovery voltage slope T st g Tj Storage Temperature Max. Operating Junction Temperature o Value 30 30 ± 20 20
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* 20
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* 160 55 0.37 7 -65 to 175 175 ( 1) ISD ≤20A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Unit V V V A A A W W /o C V/ns o o C C (
•) Pulse width limited by safe operating area (
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*) Value limi ted only by the package September 1999 1/8 STD40NE03L .