STD40N2LH5 - STMicroelectronics

STD40N2LH5 N-channel Power MOSFET

This product utilizes the 5th generation of design rules of ST’s proprietary STripFET™ technology. The lowest available RDS(on)*Qg, in the standard packages, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved. Table 1. Device summary Marking 40N2LH5 40N2LH5 Package DPAK IPAK Packaging .

Features

Type STD40N2LH5 STU40N2LH5
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■ VDSS 25 V 25 V RDS(on) max 0.012 Ω 0.0126 Ω ID 40 A 40 A 3 3 2 1 RDS(on)
* Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge High avalanche ruggedness Low gate drive power losses 1 DPAK IPAK Application
■ Switching applications Figure 1. Internal schematic diagram Description This product utilizes the 5th generation of design rules of ST’s proprietary STripFET™ technology. The lowest available RDS(on)
*Qg, in the standard packages, makes this device suitable for the most demanding DC-DC converter application.