STD150NH02L-1 - STMicroelectronics

STD150NH02L-1 N-channel Power MOSFET

so roThe STD150NH02L utilizes the latest advanced b Pdesign rules of ST’s proprietary STripFET™ - O tetechnology. This novel 0.6µ process utilizes also ) leunique metallization techniques that couple to a "bondless" assembly technique result in t(s sooutstanding performance with standard DPAK c boutline. It is therefore ideal in high performance u ODC-DC con.

Features

Type VDSSS RDS(on) ID STD150NH02L )STD150NH02L-1 24V 24V <0.0035Ω <0.0035Ω 150A 150A ct(s
■ RDS(on)
* Qg industry’s benchmark u
■ Conduction losses reduced rod )
■ Switching losses reduced P t(s
■ Low threshold device lete ducDescription so roThe STD150NH02L utilizes the latest advanced b Pdesign rules of ST’s proprietary STripFET™ - O tetechnology. This novel 0.6µ process utilizes also ) leunique metallization techniques that couple to a "bondless" assembly technique result in t(s sooutstanding performance with standard DPAK c boutline. It is therefore ideal in high performance u ODC-DC.