STB8NM60N - STMicroelectronics

STB8NM60N N-CHANNEL Power MOSFET

duThis series of devices implements second rogeneration MDmesh™ technology. This Prevolutionary Power MOSFET associates a new tevertical structure to the Company’s strip layout to leyield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most Obsodemanding high efficiency converters. 3 2 1 TO-220 3 1 DPAK 3 2 1 IPAK.

Features

Type VDSS (@Tjmax) RDS(on) max ID STB8NM60N t(s)STD8NM60N cSTD8NM60N-1 uSTF8NM60N rodSTP8NM60N 650 V 650 V 650 V 650 V 650 V < 0.65 Ω < 0.65 Ω < 0.65 Ω < 0.65 Ω < 0.65 Ω 7A 7A 7A 7 A(1) 7A P1. Limited only by maximum temperature allowed te
■ 100% avalanche tested le
■ Low input capacitance and gate charge so
■ Low gate input resistance ObApplication ) -
■ Switching applications ct(sDescription duThis series of devices implements second rogeneration MDmesh™ technology. This Prevolutionary Power MOSFET associates a new tevertical structure to the Company’s strip layout to leyield one o.