STB8NM60D - STMicroelectronics

STB8NM60D N-CHANNEL Power MOSFET

The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters Internal schematic diagram Applications The MDmesh™ family is very suitable for increasing power density of high voltage converters.

Features

Type STB8NM60D STP8NM60D
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■ VDSS 600V 600V RDS(on) < 1.0Ω < 1.0Ω ID 8A 8A PTOT 100W 100W 3 1 2 High dv/dt and avalanche capabilities 100% avalanche rated Low input capacitance and gate charge Low gate input resistance Fast internal recovery diode TO-220 3 1 D²PAK Description The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters Internal schematic diagram Applications The MDmesh™ family is very suitable for .