The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the company’s proprietary strip technique yields overall dynamic pe.
Type STD5NM60 STD5NM60-1 STB8NM60 STP8NM60 STP8NM60FP
VDSS 650 V 650 V 650 V 650 V 650 V
RDS(on) <1Ω <1Ω <1Ω <1Ω <1Ω
ID 5A 5A 5A 8A 8 A(1)
Pw 96 W 96 W 100 W 100 W 30 W
■ 100% avalanche tested
■ HIgh dv/dt and avalanche capabilities
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
Description
The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and e.
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Stati.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STB8NM60D |
STMicroelectronics |
N-CHANNEL Power MOSFET | |
2 | STB8NM60N |
STMicroelectronics |
N-CHANNEL Power MOSFET | |
3 | STB8NM60T4 |
STMicroelectronics |
N-channel Power MOSFET | |
4 | STB8N65M5 |
STMicroelectronics |
N-Channel Power MOSFET | |
5 | STB8N65M5 |
INCHANGE |
N-Channel MOSFET | |
6 | STB8N90K5 |
STMicroelectronics |
N-channel Power MOSFET | |
7 | STB8NA50 |
STMicroelectronics |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | |
8 | STB8NC50 |
STMicroelectronics |
N-CHANNEL MOSFET | |
9 | STB8NC50-1 |
STMicroelectronics |
N-CHANNEL MOSFET | |
10 | STB8NC70Z |
STMicroelectronics |
N-CHANNEL MOSFET | |
11 | STB8NC70Z-1 |
STMicroelectronics |
N-CHANNEL MOSFET | |
12 | STB8NS25 |
STMicroelectronics |
N-CHANNEL MOSFET |