This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. 1 D2PAK INTERNAL SCHEMATIC DIAGRAM.
0NF04 B100NF04 B100NF04 PACKAGE TO-220 D2PAK I2PAK PACKAGING TUBE TAPE & REEL TUBE February 2002 1/15 DataSheet 4 U .com www.DataSheet4U.com STP100NF04, STB100NF04, STB100NF04-1 ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID (#) ID IDM (l) PTOT dv/dt (1) EAS (2) Tj Tstg Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Operating Junct.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STB100NF03L-03 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
2 | STB100NF03L-03-1 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
3 | STB100NF04-1 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
4 | STB100NF04L |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
5 | STB100NF04T4 |
STMicroelectronics |
N-channel Power MOSFET | |
6 | STB100N10F7 |
STMicroelectronics |
N-channel Power MOSFET | |
7 | STB100N10F7 |
INCHANGE |
N-Channel MOSFET | |
8 | STB100N6F7 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
9 | STB100N6F7-2 |
INCHANGE |
N-Channel MOSFET | |
10 | STB100NH02L |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
11 | STB10150C |
SANGDEST MICROELECTRONICS |
SCHOTTKY RECTIFIER | |
12 | STB1017PI |
KODENSHI |
PNP Silicon Transistor |