STB100NF04-1 - ST Microelectronics

STB100NF04-1 N-CHANNEL POWER MOSFET

This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. 1 D2PAK INTERNAL SCHEMATIC DIAGRAM.

Features

0NF04 B100NF04 B100NF04 PACKAGE TO-220 D2PAK I2PAK PACKAGING TUBE TAPE & REEL TUBE February 2002 1/15 DataSheet 4 U .com www.DataSheet4U.com STP100NF04, STB100NF04, STB100NF04-1 ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID (#) ID IDM (l) PTOT dv/dt (1) EAS (2) Tj Tstg Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Operating Junct.