MOS FET Array STA509A Absolute Maximum Ratings (Ta=25ºC) Symbol VDSS VGSS ID ID (pulse) *1 PT Ratings 52± 5 ± 20 ±3 ±6 Unit V V A A W W Electrical Characteristics Symbol V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD Test Conditions ID = 1mA, VGS = 0V VGS = ± 20V VDS = 40V, VGS = 0V VDS = 10V, ID = 250µA VDS = 10V, ID.
G D G D G D G D S
s ID — VDS Characteristics
6 5
VGS = 5V VGS = 10V VGS = 4V
s ID — VGS Characteristics
20 10
VDS = 10V
RDS (on) (Ω)
4 1
3 2
VGS = 3V
0.1
1 0 0.01
0
2
4
6
8
10
12
14
0
VDS (V)
s R DS (on) — TC Characteristics
0.5
ID = 1A
0.4
VGS = 4V typ.
0.2
0.1
0
–50
0
w
w
VGS = 10V typ.
1
IDR (A)
0.3
w
RDS (on) (Ω)
Re (yfs) (S)
t a .D
10 5 0.5 10
s Re (yfs) — I D Characteristics
VDS = 10V
S a
1 2
e h
3 4
Ta =
–55ºC 25ºC 75ºC 150ºC
U 4 t e
5 6
s R DS (on) — I D Characteristics
0.8
VGS = 4V Ta = 150ºC
.c
0.6 0.4 0.2 0 0
m o
a) Type No. b) Lot No. (Uni.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STA500 |
ST Microelectronics |
30V 3.5A QUAD POWER HALF BRIDGE | |
2 | STA501 |
ST Microelectronics |
40V 3.5A Double Power Half Bridge | |
3 | STA501A |
Sanken electric |
N-channel General purpose | |
4 | STA502 |
ST Microelectronics |
40V 4A Double Power Half Bridge | |
5 | STA504A |
Sanken electric |
N-channel General purpose | |
6 | STA505 |
ST Microelectronics |
40V 3.5A QUAD POWER HALF BRIDGE | |
7 | STA505A |
Sanken electric |
N-channel General purpose | |
8 | STA506 |
ST Microelectronics |
40V 4A QUAD POWER HALF BRIDGE | |
9 | STA506A |
Sanken electric |
N-channel General purpose | |
10 | STA508 |
ST Microelectronics |
40V 4.5A QUAD POWER HALF BRIDGE | |
11 | STA508A |
Sanken electric |
MOS FET Array | |
12 | STA5100 |
STMicroelectronics |
140W MONO BASH POWER AMPLIFIER |