STA506A Absolute maximum ratings Symbol VDSS VGSS ID ID(pulse) EAS* PT Tch Tstg Ratings 100 ±20 ±2 ±5 (PW≤100µs, Du≤1%) 5.6 4 (Ta=25°C) 20 (Tc=25°C) 150 –40 to +150 N-channel General purpose (Ta=25°C) External dimensions D ••• STA (10-pin) (Ta=25°C) Electrical characteristics Symbol V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss Crss td(on) tr 1.0 1.5.
8
10
VDS (V)
Re(yfs)-ID Characteristics (Typical)
5
TC=
–40°C 25°C 125°C
(VDS=10V)
1
w
0.5
Re (yfs) (S)
VGS=4V
(ON)
(Ω)
1.0
Capacitance (pF)
w
1
w
5
t a .D
3 2 1 0 0
1.5
S a
2
TC=
–40°C
e h
4
U 4 t e
(Ω) RDS
6
.c
ns V ns
ns
m o
VGS=0V ID=1A,
VDD 50V, RL=50Ω,
VGS=5V, see Fig. 3 on page 16.
ISD=2A, VGS=0V ISD=±100mA
RDS(ON)-ID Characteristics (Typical)
0.8
VGS=4V VGS=10V
0.6
0.4
0.2
0 0 1 2 3 4 5
VGS (V)
ID (A)
RDS(ON)-TC Characteristics (Typical)
(ID=1A)
Capacitance-VDS Characteristics (Typical)
500
VGS=0V f=1MHz
Ciss
100
VGS=10V
50
Coss
RDS
0.5
0.5
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STA506 |
ST Microelectronics |
40V 4A QUAD POWER HALF BRIDGE | |
2 | STA500 |
ST Microelectronics |
30V 3.5A QUAD POWER HALF BRIDGE | |
3 | STA501 |
ST Microelectronics |
40V 3.5A Double Power Half Bridge | |
4 | STA501A |
Sanken electric |
N-channel General purpose | |
5 | STA502 |
ST Microelectronics |
40V 4A Double Power Half Bridge | |
6 | STA504A |
Sanken electric |
N-channel General purpose | |
7 | STA505 |
ST Microelectronics |
40V 3.5A QUAD POWER HALF BRIDGE | |
8 | STA505A |
Sanken electric |
N-channel General purpose | |
9 | STA508 |
ST Microelectronics |
40V 4.5A QUAD POWER HALF BRIDGE | |
10 | STA508A |
Sanken electric |
MOS FET Array | |
11 | STA509A |
Sanken electric |
MOS FET Array | |
12 | STA5100 |
STMicroelectronics |
140W MONO BASH POWER AMPLIFIER |