MOS FET Array STA508A Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse)*1 PT Ratings 120 ± 20 ±6 ± 10 4 (Ta = 25ºC) 20 (Tc = 25ºC) EAS *2 80 mJ Tch ºC 150 Tstg ºC –55 to +150 *1 PW 100µs, duty 1% *2 VDD = 12V, L = 10mH, unclamped, RG = 50Ω (Ta=25ºC) Unit V V A A W W Electrical Characteristics Symbol V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Co.
V S Ω Ω pF pF pF ns ns ns ns V
±0.2
±0.2
9.0
±0.2
b a
11.3 3.5
±0.5
2.3
1.0
±0.25
0.5
±0.15
(2.54) 0
±0.3
0
±0.3
9
•2.54=22.86
±0.05
±0.15
1 2 3 4 5 6 7 8 9 10 S G D G D G D G D S
a) Type No. b) Lot No. (Unit: mm)
s ID — VGS Characteristics
10
VDS = 10V
s R DS (on) — I D Characteristics
0.30 0.25 0.20 0.15
VGS = 10V
8
VGS = 4.5V
VGS = 4V
6
4
Ta =
–55ºC 25ºC 75ºC 150ºC
RDS (on) (Ω)
ID (A)
ID (A)
VGS = 10V
0.10 0.05
2
2
3
4
5
6
0
0
1.0
2.0
3.0
4.0
0
0
2
4
6
0.5
8
1.2
4.0
C1.5
±0.5
±0.2
±0.2
10
VDS (V)
VGS (V)
ID (A)
s Re (yfs) — I D.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STA508 |
ST Microelectronics |
40V 4.5A QUAD POWER HALF BRIDGE | |
2 | STA500 |
ST Microelectronics |
30V 3.5A QUAD POWER HALF BRIDGE | |
3 | STA501 |
ST Microelectronics |
40V 3.5A Double Power Half Bridge | |
4 | STA501A |
Sanken electric |
N-channel General purpose | |
5 | STA502 |
ST Microelectronics |
40V 4A Double Power Half Bridge | |
6 | STA504A |
Sanken electric |
N-channel General purpose | |
7 | STA505 |
ST Microelectronics |
40V 3.5A QUAD POWER HALF BRIDGE | |
8 | STA505A |
Sanken electric |
N-channel General purpose | |
9 | STA506 |
ST Microelectronics |
40V 4A QUAD POWER HALF BRIDGE | |
10 | STA506A |
Sanken electric |
N-channel General purpose | |
11 | STA509A |
Sanken electric |
MOS FET Array | |
12 | STA5100 |
STMicroelectronics |
140W MONO BASH POWER AMPLIFIER |