ST2SD882T - SEMTECH

ST2SD882T NPN Silicon Power Transistor

ST 2SD882T NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. E C B TO-126 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (pulse) Total power dissipatio.

Features

FE hFE ICBO IEBO Cob VBE(sat) VCE(sat) fT Symbol C C O Min. Typ. Max. Unit 60 100 160 200 30 - 45 90 120 200 320 400 1 1 2 0.5 - µA µA pF V V MHz - SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 22/03/2006 Free Datasheet http://www.datasheet4u.com/ ST 2SD882T TYPICAL CHARACTERISTICS (Ta=25 C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE NOTE 1.Aluminum heat sink of 1.0 mm thickness. 2.With no insulator film. 3.With silicon compound. o DERATING CURVES FOR ALL TYPES .