ST2SD1616 - SEMTECH ELECTRONICS

ST2SD1616 NPN Silicon Transistor

ST 2SD1616 / 2SD1616A NPN Silicon Transistor The 2SD1616 / 2SD1616A are designed for use in driver and output stages of AF amplifier general purpose application. The transistor is subdivided into three groups R, O and Y, according to its DC current gain On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic .

Features

616A Characteristics at Tamb=25 OC Symbol DC Current Gain 2) Min. Typ. Max. Unit at VCE=2V, IC=100mA R O Y hFE hFE hFE hFE 135 200 300 81 600 100 - - 270 400 600 700 mV nA nA V V MHz pF µs µs µs at VCE=2V, IC=1A Base Emitter Voltage 2) at VCE=2V ,IC=50mA Collector Cutoff Current at VCB=60V/120V Emitter Cutoff Current at VEB=6V Collector Saturation Voltage at IC=1A, IB=50mA Base Saturation Voltage at IC=1A, IB=50mA Gain Bandwidth Product at VCE=2V, IC=-100mA Output Capacitance at VCB=10V, f=1MHz Turn-on Time Storage Time Fall Time at VCC=10V, IC=-100mA IB1=-IB2=10 mA VBE(off)=-2 to.