ST2SD882S-P - SEMTECH

ST2SD882S-P NPN Transistor

ST 2SD882S-Q/P/E NPN Silicon Epitaxial Planar Transistor for the output stage of 0.75W audio, voltage regulator, and relay driver. The transistor is subdivided into three groups Q, P and E, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g .

Features

Current at VCB=30V Emitter Cutoff Current at VEB=3V Collector to Base Breakdown Voltage at IC=100μA Collector to Emitter Breakdown Voltage at IC=1mA Emitter to Base Breakdown Voltage at IE=10μA Collector to Emitter Saturation Voltage at IC=2A,IB=200mA Base to Emitter Saturation Voltage at IC=2A,IB=200mA Transition Frequency at VCE=5V, IC=0.1A,f=100MHz Collector Output Capacitance at VCB=10V,f=1MHz Cob 45 pF fT 90 MHz VBE(sat) 2 V VCE(sat) 0.5 V V(BR)EBO 5 V V(BR)CEO) 30 V V(BR)CBO 40 V IEBO 1 uA ICBO 1 uA hFE hFE hFE hFE 100 160 250 30 200 320 500 Min. Typ. Max. Unit SEMTECH ELECTRONICS LTD. .