ST2SA1016 - SEMTECH ELECTRONICS

ST2SA1016 PNP Silicon Epitaxial Planar Transistor

www.DataSheet4U.com ST 2SA1016 PNP Silicon Epitaxial Planar Transistor High -Voltage Low-Noise Amp applications The transistor is subdivided into three groups F, G and H, according to its DC current gain. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25℃) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Vol.

Features

down Voltage at -IE=10μA Collector Cutoff Current at -VCB=80V Emitter Cutoff Current at -VEB=4V Collector Emitter Saturation Voltage at -IC=10mA, -IB=1mA Gain Bandwidth Product at -VCE=6V, -IC=1mA Output Capacitance at -VCB=10V, f=1MHz Noise Level at VCC=30V, IC=1mA at Rg=56KΩ,VG=77dB/1kHz Noise Peak Level at VCC=30V, IC=1mA at Rg=56KΩ,VG=77dB/1kHz CNO(peak) 200 mV CNO(ave) 35 mV COB 2.2 pF fT 110 MHz -VCE(sat) 0.5 V -IEBO 1 μA -ICBO 1 μA -V(BR)EBO 5 V -V(BR)CEO 100 V -V(BR)CBO 120 V hFE hFE hFE 160 280 480 320 560 960 Min. Typ. Max. Unit SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech Inte.