ST2SC1213A - SEMTECH ELECTRONICS

ST2SC1213A NPN Silicon Epitaxial Planar Transistor

www.DataSheet4U.com ST 2SC1213 / 2SC1213A NPN Silicon Epitaxial Planar Transistor Low frequency amplifier applications. The transistor is subdivided into three groups, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 2SA673 and ST 2SA673A are recommended. On special request, these transistors can be manufactured in d.

Features

Symbol DC Current Gain at IC=10mA, VCE=3V B C D at IC=500mA, VCE=3V Collector Cutoff Current at VCB=20V at VCB=20V at IC=10μA ST 2SC1213 ST2SC1213A ST 2SC1213 ST 2SC1213A Collector Emitter Breakdown Voltage at IC=1mA Emitter Base Breakdown Voltage at IE=10μA Collector Saturation Voltage at IC=150mA, IB=15mA Base Emitter Voltage at IC=10mA, VCE=3V ST 2SC1213 ST 2SC1213A VBE VBE 0.64 0.64 V V ST 2SC1213 ST 2SC1213A VCE(sat) VCE(sat) 0.2 0.2 0.6 0.6 V V ST 2SC1213 ST 2SC1213A V(BR)EBO V(BR)EBO 4 4 V V ST 2SC1213 ST 2SC1213A V(BR)CEO V(BR)CEO 35 50 V V hFE hFE hFE hFE ICBO ICBO V(BR)CBO V(BR)CBO 6.