ST2SC1008 - SEMTECH ELECTRONICS

ST2SC1008 NPN Silicon Epitaxial Planar Transistor

www.DataSheet4U.com ST 2SC1008 NPN Silicon Epitaxial Planar Transistor for medium speed switching and low frequency amplifier applications. The transistor is subdivided into three groups, R, O, Y,and G according to its DC current gain. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Volt.

Features

llector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 10 mA Emitter Base Breakdown Voltage at IE = 10 µA Collector Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA Base Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA Gain Bandwidth Product at VCE = 10 V, IC = 50 mA Output Capacitance at VCB = 10 V, IE = 0, f = 1 MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 27/03/2009 www.DataSheet4U.com ST 2SC1008 SEMTECH ELECTRONICS LTD. (Sub.