ST2009DHI - ST Microelectronics

ST2009DHI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

The device is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation. ISOWATT218 INTERNAL SCHEMATIC DIAGRAM RBE =35 Ω Typ. ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB P tot V isol T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector.

Features

emperature Value 1500 600 7 10 20 7 55 2500 -65 to 150 150 Unit V V V A A A W V o o C C December 2002 1/6 ST2009DHI THERMAL DATA R thj-case Thermal Resistance Junction-case Max 2.3 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES I EBO V CE(sat) ∗ V BE(sat) ∗ h FE ∗ Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Test Conditions V CE = 1500 V V CE = 1500 V V EB = 4 V IC = 5 A IC = 5 A IC = 1 A IC = 5 A I C = 5.5 A IF = 5 A IC = 5 A .