ST2001HI - ST Microelectronics

ST2001HI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

The ST2001HI is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation. 3 2 1 ISOWATT218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC ICM IB Ptot Visol Tstg Tj Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltag.

Features

Value 1500 600 7 10 20 7 55 2500 -65 to 150 150 Unit V V V A A A W V oC oC 1/6 ST2001HI THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 2.3 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICES Collector Cut-off Current (VBE = 0) VCE = 1500 V VCE = 1500 V TC = 125 oC IEBO Emitter Cut-off Current (IC = 0) VCEO(sus)∗ Collector-Emitter Sustaining Voltage (IB = 0) VCE(sat)∗ Collector-Emitter Saturation Voltage VEB = 7 V IC = 100 mA IC = 5 A L = 25 mH IB = 1.25 A VBE(sat)∗ Base-Emitter Saturation Voltage IC = .