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Press Pack IEGT Silicon N-Channel IEGT ST2000GXH32 1. Applications • Electric power transmission and distribution • Motor Controllers • High-Power Switching 2. Features (1) High reliability due to hermetic sealing structure. (2) Double side cooling type. 3. Packaging and Internal Circuit ST2000GXH32 ©2021-2024 1 Toshiba Electronic Devices & Storage Corpo.
(1) High reliability due to hermetic sealing structure. (2) Double side cooling type.
3. Packaging and Internal Circuit
ST2000GXH32
©2021-2024
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
2021-09
2024-03-29 Rev.4.0
ST2000GXH32
4. Absolute Maximum Ratings (Note) (Tc = 25
�, unless otherwise specified)
Characteristics
Symbol Note
Test Condition
Rating
Unit
Collector-emitter voltage
VCES
4500
V
Gate-emitter voltage
VGES
±20
V
Collector current (DC)
IC
Tf = 101
�
2000
A
Collector current (pulsed)
ICP (Note 1)
4000
A
Diode forward c.
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|---|---|---|---|---|
| 1 | ST2001FX |
STMicroelectronics |
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|
| 2 | ST2001HI |
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| 3 | ST2009DHI |
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| 4 | ST200x |
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| 5 | ST20-27F2 |
SHINDENGEN |
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| 6 | ST20-30F2 |
SHINDENGEN |
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| 7 | ST20-33F2 |
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|
| 8 | ST20-36F2 |
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| 9 | ST20-47F2 |
SHINDENGEN |
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| 10 | ST20-C1 |
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| 11 | ST20-GP1 |
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| 12 | ST20-GP6 |
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|