ST1803DHI - ST Microelectronics

ST1803DHI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

The ST1803DHI is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation. ISOWATT218 INTERNAL SCHEMATIC DIAGRAM RBE =25 Ω T yp. ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB P t ot T stg Tj Parameter Collector-Base Voltage (IE = 0) Collector-Em.

Features

00 1/6 ST1803DHI THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max 2.5 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I EBO V CE(sat )∗ V BE(s at)∗ h FE∗ VF BV EB0 Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current G ain Diode F orward Voltage Emitter-Breakdown Voltage INDUCTIVE LOAD Storage Time Fall Time Test Cond ition s V CE = 1500 V V CE = 1500 V V EB = 4 V IC = 4 A IC = 4 A IC = 4 A IC = 1 A I C = 4.5 A IF = 5 A I E = 70.