ST1803DFX - STMicroelectronics

ST1803DFX HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

The ST1803DFX is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation. ISOWATT218FX INTERNAL SCHEMATIC DIAGRAM RBE =20 Ω Typ. ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC ICM IB Ptot Visol Tstg Tj Parameter Collector-Base Voltage (IE = 0) Collector-E.

Features

unction Temperature December 2003 Value 1500 600 7 10 15 4 60 2500 -65 to 150 150 Unit V V V A A A W V oC oC 1/6 ST1803DFX THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 2.1 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICES Collector Cut-off Current (VBE = 0) VCE = 1500 V VCE = 1500 V Tj = 125 oC IEBO V(BR)EBO VCE(sat)∗ Emitter Cut-off Current (IC = 0) Emitter-Base Breakdown Voltage (IC = 0) Collector-Emitter Saturation Voltage VEB = 4 V IE = 700 mA IC = 4 A IC = 4 A IB = 0.8 A IB = 1.2 A VBE(sat)∗ B.