ST1802HI - ST Microelectronics

ST1802HI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

The device is manufactured using Diffused Collector Technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation. ISOWATT218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB P t ot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (IB =.

Features

ance Junction-case Max 2.5 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I EBO Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = 1500 V V CE = 1500 V V EB = 7 V I C = 100 mA L = 25 mH 600 T j = 125 C o Min. Typ . Max. 1 2 1 Un it mA mA mA V V CEO(sus )∗ Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat )∗ V BE(s at)∗ h F E∗ Collector-Emitter Saturation Voltage Base-Emitt er Saturation Voltage DC Current Gain INDUCTIVE LO AD Storage Time Fall Time IC = 4 A IC = 4 A I C = 4.5 A IC = .