ST13007A - ST Microelectronics

ST13007A High voltage fast-switching NPN power transistor

The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1. Device summary Order code Mark.

Features

■ DC current gain classification
■ High voltage capability
■ Low spread of dynamic parameters
■ Very high switching speed Applications
■ Electronic ballast for fluorescent lighting
■ Switch mode power supplies Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking (1) Package .