ST13003-K - ST Microelectronics

ST13003-K HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Figure 1. Internal schematic diagram C(2) The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. B(3) SC06960r E(1) Table 1. Device summary Part n.

Features

• High voltage capability
• Low spread of dynamic parameters
• Very high switching speed Applications 1 2 3
• Electronic ballast for fluorescent lighting (CFL)
• SMPS for battery charger SOT-32 Description Figure 1. Internal schematic diagram C(2) The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. B(3) SC06960r E(1) Table 1. Device summary Part number ST13003 ST13003-K Markin.