ST13001 - SEMTECH

ST13001 NPN Silicon Epitaxial Planar Transistor

ST 13001 NPN Silicon Epitaxial Planar Transistor for high voltage and high speed switching applications Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current (DC) Total Power Dissipation Junction Temperature Storage Temperature Range 1. Emitter 2. Collector 3. Base TO-92 Pla.

Features

Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 100 µA Collector Emitter Saturation Voltage at IC = 50 mA, IB = 10 mA Base Emitter Saturation Voltage at IC = 50 mA, IB = 10 mA Transition Frequency at VCE = 20 V, IC = 20 mA, f = 1 MHz Fall Time at IC = 50 mA, IB = -IB2 = 5 mA, VCC = 45 V Storage Time at IC = 50 mA, IB = -IB2 = 5 mA, VCC = 45 V SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 29/08/2008 ST 13001 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech Internatio.