The Serial Quad I/O™ (SQI™) family of flash-memory devices features a six-wire, 4-bit I/O interface that allows for low-power, high-performance operation in a low pin-count package. SST26WF040B/040BA and SST26WF080B/ 080BA also support full command-set compatibility to traditional Serial Peripheral Interface (SPI) protocol. System designs using SQI flash dev.
• Single Voltage Read and Write Operations
- 1.65-1.95V
• Serial Interface Architecture
- Mode 0 and Mode 3 - Nibble-wide multiplexed I/O’s with SPI-like serial
command structure - x1/x2/x4 Serial Peripheral Interface (SPI) Protocol
• High Speed Clock Frequency
- 104 MHz max
• Burst Modes
- Continuous linear burst - 8/16/32/64 Byte linear burst with wrap-around
• Superior Reliability
- Endurance: 100,000 Cycles (min) - Greater than 100 years Data Retention
• Low Power Consumption:
- Active Read current: 15 mA (typical @ 104 MHz) - Standby current: 10 μA (typical) - Deep Power-Down current: 1.8.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SST26WF080B |
Microchip |
1.8V 4 Mbit and 8 Mbit Serial Quad I/O (SQI) Flash Memory | |
2 | SST26WF016B |
Microchip |
1.8V 16 Mbit Serial Quad I/O (SQI) Flash Memory | |
3 | SST26WF016BA |
Microchip |
1.8V 16 Mbit Serial Quad I/O (SQI) Flash Memory | |
4 | SST26WF032 |
Silicon Storage Technology |
1.8V Serial Quad I/O (SQI) Flash Memory | |
5 | SST26WF040B |
Microchip |
1.8V 4 Mbit and 8 Mbit Serial Quad I/O (SQI) Flash Memory | |
6 | SST26WF040BA |
Microchip |
1.8V 4 Mbit and 8 Mbit Serial Quad I/O (SQI) Flash Memory | |
7 | SST2602 |
SeCoS |
N-Channel Enhancement Mode Power MosFET | |
8 | SST2603 |
SeCoS |
P-Channel MOSFET | |
9 | SST2604 |
SeCoS |
N-Channel Enhancement Mode Power MosFET | |
10 | SST2605 |
SeCoS |
P-Channel MOSFET | |
11 | SST2610 |
VBsemi |
N-Channel MOSFET | |
12 | SST2610 |
SeCoS |
N-Channel Enhancement Mode Power MosFET |